AP2428GN3 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Bottom Exposed DFN, Low On-resistance

20
T _A =25 ^o C
16
12
5.0V
4.5V
4.0V
3.5V
V _G =2.5V
8
4
0
0
0.4
0.8
1.2
1.6
2
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I _D =3A
T _A =25 ^o C
50
40
30
20
1
2
3
4
5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T _j =150 ^o C
T _j =25 ^o C
4
2
0
0
0.4
0.8
1.2
1.6
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2428GN3
20
T _A =150 ^o C
16
12
5.0V
4.5V
4.0V
3.5V
V _G =2.5V
8
4
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =5A
1.6
V _G =4.5V
1.4
1.2
1.0
0.8
0.6
25
50
75
100
125
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
32.0
30.0
28.0
V _GS =2.5V
26.0
24.0
V _GS =4.5V
22.0
20.0
0
4
8
12
16
20
I _D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3