AP2426GEY Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

20
T _A =25 ^o C
5.0 V
4.5 V
16
3.0 V
2.5 V
12
8
V _G = 1.5 V
4
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
215
I_D=4A
175
T _A =25 ℃
135
95
55
15
0
1
2
3
4
5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
4
T _j =150 ^o C
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2426GEY
20
5.0 V
T _A = 150 ^o C
4.5 V
16
3.0 V
2.5 V
12
8
V _G = 1.5 V
4
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I_D=6A
V _G = 4.5 V
1.4
1.0
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
1.2
0.6
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4