AP2422GY_14 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Surface mount package

20
T _A =25 ^o C
16
12
5.0 V
4.5 V
3.5 V
2.5 V
8
4
V _G = 1.5 V
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
80
I_D=2A
T _A =25 ℃
60
40
20
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
T _j =150 ^o C
T _j =25 ^o C
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2422GY
20
T _A = 150 ^o C
16
5.0 V
4.5 V
3.5 V
12
2.5 V
8
4
V _G = 1.5 V
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I_D=4A
V _G = 4.5 V
1.4
1.0
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
1.2
0.6
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4