AP2338GN-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Surface Mount Device

30
T _A =25 ^o C
5.0V
4.5V
3.5V
2.5V
20
10
V _G =1.5V
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
I _D =1A
T _A =25 ^o C
80
60
40
20
0
1
2
3
4
5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T _j =150 ^o C
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2338GN-HF
30
T _A =150 ^o C
20
5.0V
4.5V
3.5V
2.5V
10
V _G =1.5V
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =5A
V _G =4.5V
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =1mA
1.5
1.0
0.5
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3