AP2309N Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

45
40
T _A =25 ^o C
35
-10V
-7.0V
30
25
-5.0V
20
-4.5V
15
10
V _G = - 3 .0V
5
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
105
I _D =-2.6A
95
T _A =25 ^o C
85
75
65
55
3
5
7
9
11
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
3
2
T _j =150 ^o C
1
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2309N
45
40
T _A = 150 ^o C
35
30
-10V
-7.0V
25
-5.0V
20
-4.5V
15
10
V _G = - 3 .0V
5
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D =3A
1.4
V G =10V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.3
1.1
0.9
0.7
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature