AP2306CGTN-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Capable of 2.5V Gate Drive, Lower On-resistance

20
T _A =25 ^o C
16
12
5.0V
4.5V
3.5V
2.5V
V _G =2.0V
8
4
0
0
1
2
3
4
5
6
7
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
32
I _D =5A
30
T _A =25 ^o C
28
26
24
22
20
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T _j =150 ^o C
T _j =25 ^o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2306CGTN-HF
20
T _A =150 ^o C
5.0V
4.5V
16
3.5V
2.5V
V _G =2.0V
12
8
4
0
0
1
2
3
4
5
6
7
8
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =5A
1.6 _{V G =4.5V}
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3