AP2304AGN Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

12
T _A =25 ^o C
10
8
10V
6.0V
5.0V
6
4.0V
4
2
V _G =3.0V
0
0
1
2
3
4
5
6
7
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
140
130
I _D =2 A
T _A =25 ℃
120
110
100
90
80
70
3
5
7
9
11
VGS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10.00
1.00
T _j =150 ^o C
0.10
T _j =25 ^o C
0.01
0.1
0.5
0.9
1.3
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2304AGN
12
T _A =150 ^o C
10
8
10V
6.0V
5.0V
6
4.0V
4
2
V _G =3.0V
0
0
1
2
3
4
5
6
7
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6
V _G =10V
I _D =2.5A
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
2.05
1.85
1.65
1.45
1.25
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature