AP2302GN-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Capable of 2.5V gate drive, Small package outline

10
T _A =25 ^o C
4.5V
3.5V
8
3.0V
2.5V
6
4
V _G =2.0V
2
0
0.0
0.5
1.0
1.5
2.0
2.5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
I _D = 3.1 A
T _A =25 ^o C
90
80
70
60
2
3
4
5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10.0
1.0
T _j =150 ^o C
T _j =25 ^o C
0.1
0.1
0.5
0.9
1.3
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2302GN-HF
6
T _A =150 ^o C
5
4.5V
3.5V
4
3.0V
2.5V
3
V _G =2.0V
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =3.6A
1.6 _{V G =4.5V}
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
1.4
1.0
0.6
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3