AP2302AGN-HF_16 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Surface Mount Package

30
T _A =25 ^o C
5.0V
4.5V
3.5V
2.5V
20
V _G =2.0V
10
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
I _D =3A
T _A =25 ^o C
40
30
20
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T _j =150 ^o C
T _j =25 ^o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2302AGN-HF
20
T _A =150 ^o C
5.0V
4.5V
16
3.5V
2.5V
12
V _G =2.0V
8
4
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =4A
1.6 ^V G ^=4.5V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
I _D =250uA
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3