AP15T03H Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

35
T_C=25^oC
30
25
10V
7.0V
20
5.0V
15
4.5V
10
5
V _G =3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
76
70
I_D=5A
T _C =25 ^o C
64
58
52
46
40
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T _j =150 ^o C
4
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP15T03H/J
21
18 T _C =150 ^o C
15
12
9
10V
7.0V
5.0V
4.5V
6
3
V _G =3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D =8A
1.4
V _G =10V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature