AP15P15GI Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

50
T _C = 25 ^o C
40
30
-10V
- 7 .0V
- 6 .0V
- 5.0 V
V _G = - 4 .0 V
20
10
0
0
4
8
12
16
20
24
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
160
I _D = -8 A
T _C =25 ℃
150
140
130
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
10
8
T _j =150 ^o C
T _j =25 ^o C
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
40
T _C =150 ^o C
30
20
AP15P15GI
-10V
-7.0V
-6.0V
-5.0V
V _G = -4.0V
10
0
0
4
8
12
16
20
24
28
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I _D = - 12 A
V _G = -10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3