AP13P15GP Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

25
T _C =25 ^o C
20
-10V
-7.0V
15
-5.0V
10
-4.5V
5
V _G = - 3 .0V
0
0
5
10
15
20
25
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1400
I _D = -7 A
T _C =25 ℃
1000
600
200
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
AP13P15GS/P
25
T_C=150^oC
20
-10V
-7.0V
15
-5.0V
10
-4.5V
5
V _G = - 3 .0V
0
0
5
10
15
20
25
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.3
I _D =- 7 A
V _G =-10V
1.8
1.3
0.8
0.3
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
4
1.1
T _j =150 ^o C
T _j =25 ^o C
2
0.7
0
0
0.2
0.4
0.6
0.8
1
1.2
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.3
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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