AP13N50W Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

30
T _C =25 ^o C
20
10
10 V
7.0 V
5.0V
4.5V
V _G = 4.0 V
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 3. Normalized BV_DSS v.s. Junction
Temperature
10
8
T _j =150 ^o C
T _j =25 ^o C
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP13N50W
20
T _C =150 ^o C
16
12
8
10V
7.0V
5.0V
4.5V
V _G = 4.0V
4
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I _D =7A
V _G =10V
2.4
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.3
1.1
0.9
0.7
0.5
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3