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IRF830I-HF_14 Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
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IRF830I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=1mA
VGS=10V, ID=2.7A
VDS=VGS, ID=250uA
VDS=10V, ID=2.7A
VDS=500V, VGS=0V
VGS=+20V, VDS=0V
ID=3.1A
VDS=400V
VGS=10V
VDD=250V
ID=3.1A
RG=12Ω,VGS=10V
RD=80.6Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
500 -
-
V
-
- 1.5 Ω
2
-
4
V
- 2.4 -
S
-
- 25 uA
-
- +100 nA
- 28 45 nC
-
4
- nC
- 16 - nC
- 10 - ns
- 15 - ns
- 41 - ns
- 20 - ns
- 710 1140 pF
- 170 - pF
- 60 - pF
-
2
-
Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Qrr
Reverse Recovery Charge
Test Conditions
IS=4.5A, VGS=0V
IS=3.1A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.5 V
- 370 - ns
- 3.9 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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