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AP9T15GH-HF_16 Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – Capable of 2.5V Gate Drive
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AP9T15GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=5V, ID=10A
Drain-Source Leakage Current
VDS=20V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=16V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+16V, VDS=0V
ID=10A
Gate-Source Charge
VDS=16V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=10V
Rise Time
ID=10A
Turn-off Delay Time
RG=3.3Ω
Fall Time
VGS=5V
Input Capacitance
VGS=0V
Output Capacitance
VDS=20V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
20 -
-
V
-
- 50 mΩ
-
- 80 mΩ
0.5 - 1.5 V
- 10 -
S
-
-
1 uA
-
- 250 uA
-
- +100 nA
-
5
8 nC
-
1
- nC
-
2
- nC
-
8
- ns
- 55 - ns
- 10 - ns
-
3
- ns
- 360 580 pF
- 70 - pF
- 50 - pF
- 1.67 - Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 17 - ns
-
9
- nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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