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| AP9620M Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP9620M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-9.5A
VGS=-2.5V, ID=-6.0A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=-250uA
VDS=-10V, ID=-9.5A
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
VGS= ± 8V
ID=-9.5A
VDS=-10V
VGS=-5V
VDS=-10V
ID=-9.5A
RG=6Ω,VGS=-4.5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=1.05Ω
VGS=0V
VDS=-15V
f=1.0MHz
-20 - - V
- -0.037 - V/â
-
- 20 mΩ
-
- 35 mΩ
- - -1 V
- 28 - S
-
- -1 uA
- - -25 uA
- - ±100 nA
- 30 - nC
- 6 - nC
- 3.5 - nC
- 26 - ns
- 500 - ns
- 70 - ns
- 300 - ns
- 2158 - pF
- 845 - pF
- 230 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25â, IS=-2.5A, VGS=0V
Min. Typ. Max. Units
- - -2.08 A
- - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 â/W when mounted on Min. copper pad.
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