AP94T07GP1-HF Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP94T07GP1-HF
Electrical Characteristics@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
R_g
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance²
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_GS=0V, I_D=250uA
V_GS=10V, I_D=40A
V_DS=V_GS, I_D=250uA
V_DS=10V, I_D=40A
V_DS=60V, V_GS=0V
V_GS=+20V, V_DS=0V
I_D=40A
V_DS=60V
V_GS=10V
V_DS=40V
I_D=40A
R_G=1Ω
V_GS=10V
V_GS=0V
V_DS=25V
f=1.0MHz
f=1.0MHz
75 -
-
V
-
-
8 mΩ
2
-
5
V
- 55 -
S
-
- 25 uA
-
- +100 nA
- 58 92 nC
- 14 - nC
- 29 - nC
- 13 - ns
- 80 - ns
- 26 - ns
- 12 - ns
- 2350 3760 pF
- 390 - pF
- 245 - pF
- 1.3 2.6 Ω
Source-Drain Diode
Symbol
V_SD
t_rr
Parameter
Forward On Voltage²
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Test Conditions
I_S=40A, V_GS=0V
I_S=10A, V_GS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 46 - ns
- 83 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
4.Starting T_j=25^oC, V_DD=30V, L=0.1mH, R_G=25Ω, I_AS=30A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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