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| AP9477GM Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP9477GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=4A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=4A
VDS=60V, VGS=0V
VDS=48V, VGS=0V
VGS=±25V
ID=4A
VDS=48V
VGS=4.5V
VDS=30V
ID=1A
RG=3.3Ω,VGS=10V
RD=30Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
60 -
-
V
- 0.04 - V/â
-
- 90 mΩ
-
- 120 mΩ
1
-
3V
-
6
-
S
-
- 10 uA
-
- 25 uA
-
- ±100 nA
-
6 10 nC
-
2
- nC
-
3
- nC
-
6
- ns
-
5
- ns
- 16 - ns
-
3
- ns
- 510 810 pF
- 55 - pF
- 35 - pF
- 1.4 -
Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=2A, VGS=0V
IS=4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 27 - ns
- 32 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 â/W when mounted on Min. copper pad.
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