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| AP9468GM Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP9468GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=14A
VGS=4.5V, ID=7A
VDS=VGS, ID=250uA
VDS=10V, ID=14A
VDS=40V, VGS=0V
VDS=32V, VGS=0V
VGS=±20V
ID=14A
VDS=32V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3Ω,VGS=10V
RD=20Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
40 -
-
V
-
-
7 mΩ
-
-
9 mΩ
0.5 -
2
V
- 14 -
S
-
- 10 uA
-
- 100 uA
-
- ±100 nA
- 32 51 nC
-
4
- nC
- 16 - nC
- 10 - ns
-
7
- ns
- 56 - ns
- 26 - ns
- 2235 3580 pF
- 365 - pF
- 325 - pF
- 1.8 2.7 â¦
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=2.1A, VGS=0V
IS=14A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 33 - ns
- 33 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 â/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
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