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| AP9412GH Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement | |||
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AP9412GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VGS=±20V
ID=40A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 -
-
V
- 0.02 - V/â
-
-
6 mΩ
-
-
8 mΩ
1
- 2.5 V
- 30 -
S
-
-
1 uA
-
- ±100 nA
- 26 42 nC
- 4.6 - nC
- 16 - nC
- 10 - ns
-
7
- ns
- 36 - ns
- 20 - ns
- 2020 3230 pF
- 450 - pF
- 295 - pF
- 0.9 1.35 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
Test Conditions
IS=40A, VGS=0V
IS=14A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 30 - ns
- 29 - nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
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