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AP85U03GP-HF Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, Simple Drive Requirement
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AP85U03GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=40A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
30 -
-
V
-
-
5 mΩ
-
-
9 mΩ
1
-
3
V
- 55 -
S
-
- 10 uA
-
- +100 nA
- 37 60 nC
- 7.5 - nC
- 23 - nC
- 12.5 - ns
- 75 - ns
- 40 - ns
- 90 - ns
- 2900 4640 pF
- 435 - pF
- 395 - pF
- 1.2 1.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 30 - ns
- 35 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Package limitation current is 80A .
4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25Ω , IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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