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AP85U03GMT Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP85U03GMT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=24V, VGS=0V
VGS=±20V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
30 -
-
V
-
-
5 mΩ
-
- 10 mΩ
1
-
3
V
- 19.5 -
S
-
-
1 uA
-
- ±100 nA
- 29 46 nC
- 6.4 - nC
- 19 - nC
- 10 - ns
- 84 - ns
- 27 - ns
- 83 - ns
- 2400 3840 pF
- 395 - pF
- 390 - pF
- 1.2 1.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 33 - ns
- 30 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec
4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25Ω.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
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