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| AP85T03GH-HF Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP85T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=4.5V, ID=30A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=30A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=175oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V
ID=30A
Gate-Source Charge
VDS=24V
Gate-Drain ("Miller") Charge
VGS=4.5V
Output Charge
Turn-on Delay Time2
VDD=15V,VGS=0V
VDS=15V
Rise Time
ID=30A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=0.5Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
30 -
-
V
- 0.02 - V/â
-
-
6 mâ¦
-
- 10 mâ¦
1
-
3V
- 55 -
S
-
-
1 uA
-
- 500 uA
-
- +100 nA
- 33 52 nC
-
8
nC
- 24
nC
- 24.5 39 nC
- 11 - ns
- 77 - ns
- 35 - ns
- 67 - ns
- 2700 4200 pF
- 550 - pF
- 380 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 28 - ns
- 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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