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AP80N30W_16 Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
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AP80N30W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VGS=0V, ID=250uA
VGS=10V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=240V, VGS=0V
VGS= +30V, VDS=0V
ID=30A
VDS=240V
VGS=10V
VDS=150V
ID=30A
RG=10Ω
VGS=10V
VGS=0V
VDS=30V
.f=1.0MHz
Test Conditions
IS=30A, VGS=0V
IS=12A, VGS=0V
dI/dt=100A/µs
300 -
-
-
-
V
66 mΩ
3
- 4.5 V
- 56 -
S
-
- 25 uA
-
- +0.1 uA
- 117 180 nC
- 28 - nC
- 42 - nC
- 40 - ns
- 90 - ns
- 165 - ns
- 95 - ns
- 5700 9120 pF
- 525 - pF
- 10 - pF
Min. Typ. Max. Units
-
- 1.5 V
- 310 - ns
- 3.5 - µC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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