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AP6950GYT-HF_16 Datasheet, PDF (2/8 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
AP6950GYT-HF
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=8A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=8A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=8A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=15V
f=1.0MHz
f=1.0MHz
30 -
-
V
- 14 18 mΩ
- 23.2 30 mΩ
1 1.4 3 V
- 14 -
S
-
- 10 uA
-
- +100 nA
- 4.2 6.7 nC
- 1.8 - nC
- 1.9 - nC
- 6.5 - ns
-
6
- ns
- 15 - ns
-
3
- ns
- 450 720 pF
- 70 - pF
- 50 - pF
- 1.2 2.4 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=8A, VGS=0V
IS=8A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 13 - ns
-
6
- nC
2