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AP6941GMT-HF_16 Datasheet, PDF (2/8 Pages) Advanced Power Electronics Corp. – Good Thermal Performance
AP6941GMT-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=4.5V, ID=10A
VGS=2.5V, ID=6A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=16V, VGS=0V
VGS=+8V, VDS=0V
ID=10A
VDS=10V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3Ω
VGS=5V
VGS=0V
VDS=10V
f=1.0MHz
f=1.0MHz
20 -
-
V
- 12.8 16 mΩ
- 20 26 mΩ
0.3 0.64 1.2 V
- 25 -
S
-
- 10 uA
-
- +100 nA
-
8 12.8 nC
- 1.1 - nC
- 3.9 - nC
- 10 - ns
- 10 - ns
- 18 - ns
-
6
- ns
- 600 960 pF
- 125 - pF
- 115 - pF
- 1.5 3 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=10A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 24 - ns
- 15 - nC
2