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| AP6680GM Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – Low On-Resistance, High Vgs Max Rating Voltage | |||
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AP6680GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=11.5A
VGS=4.5V, ID=9.5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
VDS=10V, ID=11.5A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ± 25V
ID=11.5A
Gate-Source Charge
VDS=15V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=5V
VDS=15V
Rise Time
Turn-off Delay Time
ID=1A
RG=5.5Ω,VGS=10V
Fall Time
RD=10Ω
Input Capacitance
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
30 -
-
V
- 0.02 - V/â
-
- 11 mΩ
-
- 18 mΩ
1
-
3
V
- 30 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 16.8 - nC
- 4.2 - nC
-
8
- nC
- 8.9 - ns
- 7.3 - ns
- 25.6 - ns
- 18.6 - ns
- 1450 - pF
- 285 - pF
- 180 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25â, IS=3.5A, VGS=0V
Min. Typ. Max. Units
-
- 1.92 A
-
- 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 â/W when mounted on Min. copper pad.
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