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| AP60L02GJ Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – Low Gate Charge Simple Drive Requirement | |||
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AP60L02GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=25A
VGS=4.5V, ID=20A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=25A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS= ± 20V
ID=25A
VDS=20V
VGS=5V
VDS=15V
ID=20A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=0.75Ω
VGS=0V
VDS=25V
f=1.0MHz
25 -
-
V
- 0.037 - V/â
-
- 12 mΩ
-
- 26 mΩ
1
-
3V
- 30 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 21
nC
- 2.8
nC
- 16
nC
-
8
- ns
- 75 - ns
- 22 - ns
- 20 - ns
- 605 - pF
- 415 - pF
- 195 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.26V
Tj=25â, IS=50A, VGS=0V
Min. Typ. Max. Units
-
- 50 A
-
- 180 A
-
- 1.26 V
Drain-Source Avalanche Ratings
Symbol
EAS
Parameter
Single Pulse Avalanche Energy2
IAR
Avalanche Current
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Test Conditions
VDD=25V, ID=35A, L=100uH
VGS=10V
Min. Typ. Max. Units
-
- 61 mJ
-
- 35 A
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