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AP4813GYT-HF_14 Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
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AP4813GYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=12A
VGS=4.5V, ID=8A
VDS=VGS, ID=250uA
VDS=10V, ID=8A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=8A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=15V
f=1.0MHz
f=1.0MHz
30 -
-
V
- 7.7 10 mΩ
- 12.3 15 mΩ
1 1.4 3 V
-
19 -
S
-
- 100 uA
-
- +100 nA
- 13.5 22 nC
- 3.5 - nC
- 7.5 - nC
-
9
- ns
-
7
- ns
- 27 - ns
- 10 - ns
- 1100 1760 pF
- 220 - pF
- 170 - pF
- 1.6 3.2 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Test Conditions
Diode+Schottky Forward On Voltage2 IS=1.0A, VGS=0V
Body Diode+Schottky Reverse Recovery Time IS=8A, VGS=0V,
Body Diode+Schottky Reverse Recovery Charge dI/dt=100A/µs
Min. Typ. Max. Units
- 0.48 0.5 V
- 18 - ns
-
8
- nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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