AP4509GM-HF Datasheet, PDF(2/7 Page) Advanced Power Electronics Corp. – Simple Drive Requirement, Low On-resistance

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

AP4509GM-HF Datasheet, PDF (2/7 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low On-resistance

◁

AP4509GM-HF

N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

RDS(ON)

VGS(th)

gfs

IDSS

IGSS

Qgs

Qgd

td(on)

td(off)

Ciss

Coss

Crss

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

Static Drain-Source On-Resistance2 VGS=10V, ID=9A

VGS=4.5V, ID=5A

Gate Threshold Voltage

VDS=VGS, ID=250uA

Forward Transconductance

VDS=10V, ID=9A

Drain-Source Leakage Current

VDS=30V, VGS=0V

Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V

Gate-Source Leakage

Total Gate Charge2

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time2

Rise Time

Turn-off Delay Time

Fall Time

VGS=+20V, VDS=0V

ID=9A

VDS=24V

VGS=4.5V

VDS=15V

ID=1A

RG=3.3Î©

VGS=10V

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS=0V

VDS=25V

f=1.0MHz

30 -

- 14 mÎ©

- 20 mÎ©

- 14 -

- 10 uA

- 100 uA

- +100 nA

- 23 65 nC

- nC

- 14 - nC

- 14 - ns

- 10 - ns

- 36 - ns

- 17 - ns

- 1770 2830 pF

- 430 - pF

- 350 - pF

Source-Drain Diode

Symbol

VSD

trr

Qrr

Parameter

Forward On Voltage2

Reverse Recovery Time2

Reverse Recovery Charge

Test Conditions

IS=1.7A, VGS=0V

IS=9A, VGS=0V

dI/dt=100A/Âµs

Min. Typ. Max. Units

- 1.2 V

- 31 - ns

- 25 - nC

▷