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| AP4506GEH-HF_14 Datasheet, PDF (2/7 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement | |||
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AP4506GEH-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=6A
VGS=4.5V, ID=4A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=6A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
Gate-Source Leakage
VGS=+20V, VDS=0V
Total Gate Charge
ID=6A
Gate-Source Charge
VDS=24V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time
VDS=15V
Rise Time
ID=6A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=2.5Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
30 -
-
V
-
- 24 mâ¦
-
- 32 mâ¦
1
-
3
V
- 17 -
S
-
- 10 uA
-
- 25 uA
-
- +30 uA
- 8.3 13 nC
- 1.5 - nC
-
4
- nC
-
5
- ns
- 18 - ns
- 18 - ns
-
4
- ns
- 575 920 pF
- 100 - pF
- 70 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=6A, VGS=0V
IS=6A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 19 - ns
- 14 - nC
2
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