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| AP40T03GH-HF Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP40T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=18A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=14A
VDS=VGS, ID=250uA
VDS=10V, ID=18A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±25V
ID=18A
VDS=20V
VGS=4.5V
VDS=15V
ID=18A
RG=3.3Ω,VGS=10V
RD=0.83Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-
V
- 0.032 - V/â
-
- 25 mΩ
-
- 45 mΩ
1
-
3
V
- 15 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 8.8 - nC
- 2.5 - nC
- 5.8 - nC
-
6
- ns
- 62 - ns
- 16 - ns
- 4.4 - ns
- 655 - pF
- 145 - pF
- 95 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25â, IS=28A, VGS=0V
Min. Typ. Max. Units
-
- 28 A
-
- 95 A
-
- 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
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