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AP2762R-A Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP2762R-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=4A
VDS=480V, VGS=0V
VGS=±30V
ID=6A
VDS=200V
VGS=10V
VDD=200V
ID=3A
RG=50Ω,VGS=10V
RD=67Ω
VGS=0V
VDS=30V
f=1.0MHz
650 -
-
V
-
- 1.4 Ω
2
-
4
V
- 3.5 -
S
-
- 100 uA
-
- ±100 nA
- 31 50 nC
-
7
- nC
- 13 - nC
- 33 - ns
- 29 - ns
- 186 - ns
- 46 - ns
- 1330 2130 pF
- 100 - pF
-
8
- pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Qrr
Reverse Recovery Charge
Test Conditions
IS=6A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.5 V
- 475 - ns
- 6.4 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
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