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| AP2318GEN Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP2318GEN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=4V, ID=500mA
VGS=2.5V, ID=200mA
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=4V, ID=500mA
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS=±16V
ID=1A
VDS=25V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-
V
- 0.04 - V/â
-
- 720 mΩ
-
- 1200 mΩ
0.4 - 1.3 V
- 725 - mS
-
-
-1 uA
-
- -25 uA
-
- ±30 uA
- 1.1 1.8 nC
- 0.4 - nC
- 0.4 - nC
- 17 - ns
- 44 - ns
- 45 - ns
- 55 - ns
- 30 48 pF
- 12 - pF
- 11 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=1A, VGS=0V
Min. Typ. Max. Units
-
- 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270â/W when mounted on min. copper pad.
2/4
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