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| AP2312GN_14 Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – Lower on-resistance | |||
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AP2312GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=5A
VGS=4.5V, ID=4A
Gate Threshold Voltage
VGS=2.5V, ID=3A
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=5V, ID=4A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±12V
ID=4A
VDS=16V
VGS=4.5V
VDS=15V
ID=1A
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RG=3.3Ω,VGS=5V
RD=15Ω
VGS=0V
VDS=20V
f=1.0MHz
Gate Resistance
f=1.0MHz
20 -
-
V
- 0.02 - V/â
-
- 36 mΩ
-
- 50 mΩ
-
- 75 mΩ
0.5 - 1.2 V
-
16 -
S
-
-
1 uA
-
- 10 uA
-
- ±100 nA
-
5
8 nC
-
1
- nC
- 2.3 - nC
-
8
- ns
-
9
- ns
- 11 - ns
-
2
- ns
- 360 580 pF
- 75 - pF
- 60 - pF
- 1.5 - Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 16 - ns
-
8
- nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 270 â/W when mounted on Min. copper pad.
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