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| AP2306AGN Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP2306AGN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=5A
VGS=2.5V, ID=2.6A
VGS=1.8V, ID=1.0A
VDS=VGS, ID=250uA
VDS=5V, ID=5A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ± 12V
ID=5A
VDS=16V
VGS=4.5V
VDS=15V
ID=5A
RG=3.3Ω,VGS=10V
RD=3Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-
V
- 0.1 - V/â
-
- 30 mΩ
-
- 35 mΩ
-
- 50 mΩ
-
- 90 mΩ
0.5 - 1.2 V
-
13 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 8.5 15 nC
- 1.5 - nC
- 3.2 - nC
-
6
- ns
- 20 - ns
- 20 - ns
-
3
- ns
- 660 1050 pF
- 90 - pF
- 70 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 14 - ns
-
7
- nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270â/W when mounted on min. copper pad.
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