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| AP2303N Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE | |||
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AP2303N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-1.7A
VGS=-4.5V, ID=-1.3A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-10V, ID=-1.7A
VDS=-30V, VGS=0V
VDS=-30V, VGS=0V
VGS= ± 20V
ID=-1.7A
VDS=-15V
VGS=-10V
VDS=-15V
ID=-1A
RG=6Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-15V
f=1.0MHz
-30 -
-
V
- -0.1 - V/â
-
- 240 mΩ
-
- 460 mΩ
-1
-
-
V
-
2
-
S
-
-
-1 uA
-
- -10 uA
-
- ±100 nA
- 6.2 - nC
- 1.4 - nC
- 0.3 - nC
- 7.6 - ns
- 8.2 - ns
- 17.5 - ns
-
9
- ns
- 230 - pF
- 130.4 - pF
- 40 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
IS=-1.25A, VGS=0V
Min. Typ. Max. Units
-
- -1 A
-
- -10 A
-
- -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270â/W when mounted on min. copper pad.
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