AP20GT60SW_16 Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – High Speed Switching

AP20GT60SW
200
T _C =25 ^o C
160
120
20V
18V
15V
12V
V _GE =10V
80
40
0
0
2
4
6
8
10
12
V _CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
16
I _C =20A
12
V _CC =480V
8
4
0
0
20
40
60
80
100
120
Q _G , Gate Charge (nC)
Fig 2. Gate Charge Characterisitics
120
V _GE =15V
100
T _C =25 ℃
80
T _C =150 ℃
60
.
40
20
0
0
1
2
3
4
5
6
V _CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
1.6
I _C =10mA
1.2
0.8
0.4
0
-50
0
50
100
150
Junction Temperature ( ^o C )
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
4
V _GE = 15 V
3
2
I _C = 40 A
I _C =20A
1
0
0
40
80
120
160
Junction Temperature ( ^o C)
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
5000
4000
C _ies
3000
2000
-
-
1000
C _oes
0
C _res
1
5
9
13
17
21
25
29
V _CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
2