AP20GT60P-HF Datasheet, PDF (2/3 Pages) Advanced Power Electronics Corp. – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP20GT60P-HF
200
T _C =25 ^o C
20V
18V
160
15V
12V
V _GE =10V
120
80
40
0
0
4
8
12
16
V _CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
200
V _GE =15V
160
T _C =25 ℃
120
T _C =150 ℃
80
40
0
0
2
4
6
8
V _CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
Junction Temperature ( ^o C )
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
200
T _C =150 ^o C
160
120
20V
18V
15V
12V
V _GE =10V
80
40
0
0
4
8
12
16
V _CE , Collector-Emitter Voltage (V)
Fig 2. Typical Output Characteristics
4
V _GE = 15 V
3
I _C = 40 A
2
I _C =20A
1
0
40
80
120
160
Junction Temperature ( ^o C)
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
5000
4000
C _ies
3000
2000
-
-
1000
C _oes
0
C _res
1
5
9
13
17
21
25
29
33
V _CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
2