IRF840_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
▼ Ease of Paralleling
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
IRF840
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
R_DS(ON)
500V
0.85Ω
G
I_D
8A
S
Description
APEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
G
DS
The TO-220 and package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
TO-220(P)
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Rating
500
±20
8
5.1
32
125
1
320
8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Max.
Max.
Value
1.0
62
Unit
℃/W
℃/W
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