APS04N60H-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
APS04N60H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free ^G
S
Description
APS04N60 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an
extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance.
BV_DSS
R_DS(ON)
I_D
620V
2.5Ω
4A
G
D
S
TO-252(H)
Absolute Maximum Ratings@T_j=25^o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Single Pulse Avalanche Energy³
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
620
V
+30
V
4
A
2.2
A
15
A
59.5
W
8
mJ
4
A
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Value
2.1
62.5
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201501132