English
Language : 

APA2N70K_14 Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
Advanced Power
Electronics Corp.
APA2N70K
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
D
SOT-223
S
D
G
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
G
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 package.
600V
10Ω
0.35A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
IDM
PD@TA=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+30
0.35
1.4
2.7
0.5
1
-55 to 150
-55 to 150
Units
V
V
A
A
W
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient4
Data & specifications subject to change without notice
Value
45
Unit
℃/W
1
201201163