APA2N70K Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

APA2N70K
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
D
SOT-223
S
D
G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
675V
10Ω
0.2A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
E_AR
T_STG
T_J
Continuous Drain Current, V_GS @ 5V
Continuous Drain Current, V_GS @ 5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Thermal Resistance Junction-ambient
Rating
675
± 30
0.2
0.13
0.5
1.13
0.01
0.5
1
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Max.
Value
110
Unit
℃/W
Data & specifications subject to change without notice
201130020