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AP9T18GH_14 Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Low Gate Charge | |||
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Advanced Power
Electronics Corp.
AP9T18GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low Gate Charge
D
â¼ Capable of 2.5V gate drive
â¼ Surface mount package
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
14mΩ
38A
G DS
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
G
D
S
TO-251(J)
Rating
20
+16
38
24
140
31.3
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Value
4
110
Units
â/W
â/W
Data and specifications subject to change without notice
1
200809123
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