AP9T16GJ_14 Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Low Gate Charge

Advanced Power
Electronics Corp.
AP9T16GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
20V
25mΩ
25A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
G
D
S
TO-251(J)
Rating
20
+16
25
16
90
25
0.2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Value
5
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200808154