AP99T06AGP-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP99T06AGP-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP99T06A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
BV_DSS
R_DS(ON)
I_D
G
D
S
60V
4.2mΩ
135A
TO-220(P)
Absolute Maximum Ratings@T_j=25^oC_. (unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
60
V
V_GS
Gate-Source Voltage
+20
V
I_D@T_C=25℃
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
Drain Current (Chip)
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
135
A
120
A
85
A
320
A
P_D@T_C=25℃
Total Power Dissipation
138.8
W
P_D@T_A=25℃
Total Power Dissipation
2
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.9
62
Units
℃/W
℃/W
1
201501133