AP99T03GP-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP99T03GP-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP99T03 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance
and low package cost contribute to the worldwide popular
package.
BV_DSS
R_DS(ON)
I_D3
30V
2.5mΩ
200A
G
D
S
TO-220(P)
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
. _Parameter
Rating
Units
V_DS
Drain-Source Voltage
30
V
V_GS
I_D@T_C=25℃
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
T_STG
T_J
Gate-Source Voltage
Drain Current (Chip)
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
V
200
A
120
A
120
A
800
A
156
W
2
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.8
62
Units
℃/W
℃/W
1
201410283