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| AP9997BGH-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement | |||
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Advanced Power
Electronics Corp.
AP9997BGH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Simple Drive Requirement
â¼ Lower Gate Charge
â¼ Fast Switching Characteristic
G
â¼ Halogen Free & RoHS Compliant Product
D
BVDSS
RDS(ON)
ID
S
100V
145mâ¦
9.3A
Description
AP9997B series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial surface
mount applications using infrared reflow technique and suited for high
current application due to the low connection resistance. The through-hole
version (AP9997BGJ) are available for low-profile applications.
G
D
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
PD@TA=25â
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
+30
V
9.3
A
5.8
A
30
A
27.8
W
2
W
-55 to 150
â
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.5
62.5
110
Units
â/W
â/W
â/W
Data and specifications subject to change without notice
1
201501262
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