AP9992AGP-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP9992AGP-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Lower Gate Charge
G
▼ RoHS Compliant & Halogen-Free
S
BV_DSS
R_DS(ON)
I_D
Description
A_ThP_e99_A9_d2_vA_ans_ce_eri_des_Poa_wre_ef_rro_Mm_OA_Sd_Fv_Ea_Tn_sce_frd_omPo_Aw_Pe_Er_Cin_pn_ro_ov_va_it_de_ed _td_he_esign and silicon
p_dr_eo_sc_ige_nss_erte_wc_ih_thno_tl_ho_egy_bt_eo_stac_ch_oi_mev_be_int_ah_te_iol_now_oe_fs_ft_ap_so_t s_ss_wib_il_te_cho_in_n-_gre_, sistance and fast
s_ruw_git_gc_eh_din_izg_ep_de_drf_eo_vr_im_cean_dc_ee_s._igIt_np_, r_lo_ov_wide_os_n-t_rh_ee_sisd_te_as_nig_cn_ee_ar_nw_dit_ch_oa_sn_t-ee_fx_ft_ere_ctm_ive_ene_eff_sic_si_.ent
device for use in a wide range of power applications
The TO-220 package is widely preferred for all commercial-industrial G
through hole applications. The low thermal resistance and low package
D
S
cost contribute to the worldwide popular package.
60V
3.5mΩ
161A
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V_GS @ 10V³
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
+20
161
120
102
300
166
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.75
62
Units
℃/W
℃/W
1
201205111