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AP9977GM_14 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Single Drive Requirement | |||
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Advanced Power
Electronics Corp.
AP9977GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low On-resistance
â¼ Single Drive Requirement
â¼ Surface Mount Package
Description
D2
D2
D1
D1
G2
S2
G1
S1
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G1
G2
S1
60V
100mΩ
3.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
60
±25
3.3
2.7
20
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/â
â
â
Unit
â/W
Data and specifications subject to change without notice
201108073-1/4
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